145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com process CPS041 silicon controlled rectifier sensitive gate scr chip princip al device types cs18d brx49 cs92d cs89m geometry process details r1 (19 -may 2005) process glass passivated mesa die size 41 x 41 mils die thickness 8.7 mils 0.6 mils cathode bonding pad area 18 x 8 mils gate bonding pad area 7.1 x 7.1 mils top side metalization al - 45,000? back side metalization au - 10,000? gross die per 4 inch w afer 6,474
145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com process CPS041 typical electrical characteristics r1 (19 -may 2005)
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